Group iii-nitride silicon controlled rectifier

ABSTRACT

A Group III-Nitride (III-N) device structure is provided comprising: a heterostructure having three or more layers comprising III-N material, an anode n+ region and a cathode comprising donor dopants, wherein the anode n+ region and the cathode are on the first layer of the heterostructure and wherein the anode n+ region and the cathode extend beyond the heterostructure, and an anode metal region within a recess that extends through two or more of the layers, wherein the anode metal region is in electrical contact with the first layer, wherein the anode metal region comprises a first width within the recess and a second width beyond the recess, and wherein the anode metal region is coupled with the anode n+ region. Other embodiments are also disclosed and claimed.

BACKGROUND

Diodes are a common circuit element used in integrated circuits (ICs).Diodes are useful for protecting circuitry from over-voltages, such asthose associated with electrostatic discharge (ESD) events. Absent aprotection circuit, discharge through a device such as a transistor, cancause catastrophic damage to an IC. Diodic protection circuits maytherefore be configured as part of a functional IC to shunt surges inpotential away from circuitry that could otherwise be damaged. GroupIII-Nitride (IUPAC 13-N) semiconductor materials offer the benefit of arelatively wide bandgap (˜3.4eV), enabling higher breakdown voltagesthan Si-based devices. Group III-Nitride (III-N) semiconductor materialsalso offer high carrier mobility. However, III-N diodes withsufficiently low on-resistance tend to be an area-intensive circuitelement even when monolithically integrated with transistors of an IC.

III-N diode structures enabling a smaller area are thereforeadvantageous at least for enabling dimensional scaling of the deviceplatforms that employ them.

BRIEF DESCRIPTION OF THE DRAWINGS

The material described herein is illustrated by way of example and notby way of limitation in the accompanying figures. For simplicity andclarity of illustration, elements illustrated in the figures are notnecessarily drawn to scale. For example, the dimensions of some elementsmay be exaggerated relative to other elements for clarity. Also, variousphysical features may be represented in their simplified “ideal” formsand geometries for clarity of discussion, but it is nevertheless to beunderstood that practical implementations may only approximate theillustrated ideals. For example, smooth surfaces and squareintersections may be drawn in disregard of finite roughness,corner-rounding, and imperfect angular intersections characteristic ofstructures formed by nanofabrication techniques. Further, whereconsidered appropriate, reference labels have been repeated among thefigures to indicate corresponding or analogous elements. In the figures:

FIG. 1 is a schematic of a silicon controlled rectifier circuit, inaccordance with some embodiments;

FIG. 2 is a cross-sectional view an exemplary III-N heterojunctionsilicon controlled rectifier structure, in accordance with someembodiments;

FIG. 3 is a cross-sectional view an exemplary III-N heterojunctionsilicon controlled rectifier structure, in accordance with someembodiments;

FIG. 4 is a cross-sectional view an exemplary III-N heterojunctionsilicon controlled rectifier structure, in accordance with someembodiments;

FIG. 5 is a flow diagram illustrating methods of forming III-Nheterojunction silicon controlled rectifier structures, in accordancewith some embodiments; and

FIG. 6 illustrates a smart device or a computer system or a SoC(System-on-Chip) which includes a III-N heterojunction siliconcontrolled rectifier structure, in accordance with some embodiments.

DETAILED DESCRIPTION

One or more embodiments are described with reference to the enclosedfigures. While specific configurations and arrangements are depicted anddiscussed in detail, it should be understood that this is done forillustrative purposes only. Persons skilled in the relevant art willrecognize that other configurations and arrangements are possiblewithout departing from the spirit and scope of the description. It willbe apparent to those skilled in the relevant art that techniques and/orarrangements described herein may be employed in a variety of othersystems and applications other than what is described in detail herein.

Reference is made in the following detailed description to theaccompanying drawings, which form a part hereof and illustrate exemplaryembodiments. Further, it is to be understood that other embodiments maybe utilized and structural and/or logical changes may be made withoutdeparting from the scope of claimed subject matter. It should also benoted that directions and references, for example, up, down, top,bottom, and so on, may be used merely to facilitate the description offeatures in the drawings. Therefore, the following detailed descriptionis not to be taken in a limiting sense and the scope of claimed subjectmatter is defined solely by the appended claims and their equivalents.

In the following description, numerous details are set forth. However,it will be apparent to one skilled in the art, that the presentinvention may be practiced without these specific details. In someinstances, well-known methods and devices are shown in block diagramform, rather than in detail, to avoid obscuring the present invention.Reference throughout this specification to “an embodiment” or “oneembodiment” or “some embodiments” means that a particular feature,structure, function, or characteristic described in connection with theembodiment is included in at least one embodiment of the invention.Thus, the appearances of the phrase “in an embodiment” or “in oneembodiment” or “some embodiments” in various places throughout thisspecification are not necessarily referring to the same embodiment ofthe invention. Furthermore, the particular features, structures,functions, or characteristics may be combined in any suitable manner inone or more embodiments. For example, a first embodiment may be combinedwith a second embodiment anywhere the particular features, structures,functions, or characteristics associated with the two embodiments arenot mutually exclusive.

As used in the description and the appended claims, the singular forms“a”, “an” and “the” are intended to include the plural forms as well,unless the context clearly indicates otherwise. It will also beunderstood that the term “and/or” as used herein refers to andencompasses any and all possible combinations of one or more of theassociated listed items.

The terms “coupled” and “connected,” along with their derivatives, maybe used herein to describe functional or structural relationshipsbetween components. It should be understood that these terms are notintended as synonyms for each other. Rather, in particular embodiments,“connected” may be used to indicate that two or more elements are indirect physical, optical, or electrical contact with each other.“Coupled” may be used to indicated that two or more elements are ineither direct or indirect (with other intervening elements between them)physical or electrical contact with each other, and/or that the two ormore elements co-operate or interact with each other (e.g., as in acause an effect relationship).

The terms “over,” “under,” “between,” and “on” as used herein refer to arelative position of one component or material with respect to othercomponents or materials where such physical relationships arenoteworthy. For example in the context of materials, one material ormaterial disposed over or under another may be directly in contact ormay have one or more intervening materials. Moreover, one materialdisposed between two materials may be directly in contact with the twolayers or may have one or more intervening layers. In contrast, a firstmaterial “on” a second material is in direct contact with that secondmaterial/material. Similar distinctions are to be made in the context ofcomponent assemblies.

As used throughout this description, and in the claims, a list of itemsjoined by the term “at least one of” or “one or more of” can mean anycombination of the listed terms. For example, the phrase “at least oneof A, B or C” can mean A; B; C; A and B; A and C; B and C; or A, B andC.

FIG. 1 is schematic of an example electrical circuit 100 including atleast one III-N heterojunction silicon controlled rectifier (SCR). Asshown, circuit 100 includes SCR 102, gate trigger circuit 104, powerconverter 108, and load 110. Circuit 100 may be implemented in anyelectronic device, such as, but not limited to, smartphones, ultrabookcomputers, embedded devices (e.g., internet of things, automotiveapplications, etc.), or wearables. In circuit 100, SCR 102, along withgate trigger circuit 104 may act as a crowbar circuit to protect powerconverter 108 and load 110 from over-current conditions. Power converter108 includes a first terminal (e.g., anode n+ region) coupled to a firstsupply rail maintained at a nominal supply voltage (e.g., V_(cc)), and asecond terminal (e.g., cathode) coupled to second supply rail maintainedat a nominal reference voltage (e.g., V_(ss)). Load 110 may representany type of circuitry or component that may be sensitive to overvoltageconditions. In some embodiments, load 110 may include a transceiver orcommunication circuit, for example.

Under normal operating conditions, SCR 102 is maintained in theoff-state such that current in circuit 100 is flowing through powerconverter 108. However, upon experiencing a potential surge in current,in excess of a preset value, gate trigger circuit 104 will turn on SCR102, creating a short-circuit that will bypass power converter 108. SuchSCR device structures may have one or more of the features describedfurther below. Any of the III-N heterostructure devices describedfurther herein may also be employed in any other suitable protectioncircuit designs. Any of the III-N heterostructure devices describedfurther herein may also be employed in circuits having functions otherthan high voltage power management circuitry, such as, but not limitedto, ESD protection.

FIG. 2 is a cross-sectional view an exemplary III-N heterojunctionsilicon controlled rectifier structure, in accordance with someembodiments. As shown in FIG. 2, device 200 may include substrate 202,buffer layer 204, channel layer 206, polarization layer 208, barrierlayer 210, capping layer 212, two-dimensional charge carrier sheet 213(e.g., 2D electron gas or “2DEG”), anode n+ region 214, cathode 216,anode metal region 220, contact metal 222, interconnect metal 224 andspacer material 226.

In some embodiments, substrate 202 may be a SiC substrate. In otherembodiments, substrate 202 is a cubic semiconductor, such asmonocrystalline silicon. For such embodiments, template structures maybe formed on a cubic substrate surface, such as a (100) surface. III-Ncrystals may also be grown on other surfaces (e.g., 110, 111, miscut oroffcut, for example 2-10° toward [110] etc.). In some embodiments,substrate 202 may be material upon which the III-N crystal has beenbonded, in which case substrate 202 may be crystalline, or not (e.g.,glass, polymer, etc.).

Buffer layer 204 may be present to buffer channel layer 206 fromsubstrate 202. In some embodiments, buffer layer 204 may include AIN orAlGaN, or other III-N or other materials chosen to differentiate fromthe material used for channel layer 206.

In some embodiments, a III-N heterostructure may include channel layer206, polarization layer 208, and barrier layer 210. Polarization layer208 comprises an alloy distinct from the alloy of channel layer 206,thereby inducing a variation in the polarization field strength (e.g.,spontaneous and/or piezoelectric) between these two III-N layers. Wherespontaneous and/or piezoelectric polarization field strengths aresufficiently different between polarization layer 208 and III-N channellayer 206, 2DEG 213 is formed within channel layer 206 in the absence ofany externally applied field.

For some exemplary embodiments having Ga-polarity, polarization layer208 has a higher Al content than III-N channel layer 206. Polarizationlayer 208 may be binary AIN. Polarization layer 208 may also be an AlGaNalloy. Exemplary AlGaN embodiments include 25-40% A1 (Al_(x)Ga_(1-x)Nwhere 0.25≤x≤0.4). Polarization layer 208, or barrier layer 210, mayalso be an InAIN alloy or a quaternary alloy, which are also suitable asa polarization material and may offer advantages with respect to tuningthe lattice constant to better match that of one or more other materiallayers (e.g., layers 206 and/or 210). Exemplary InAIN embodimentsinclude less than 20% In (In_(x)Al_(1-x)N where 0.25<x≤0.2), with 17% Inhaving the advantage of an exceptional lattice match with binary GaN.Exemplary quaternary alloys include In_(x)Ga_(y)Al_(1-x-y)N with 0<x≤0.2 and 0<y ≤0.2.

In some embodiments, III-N channel layer 206 may be binary GaN. III-Nchannel layer 206 may also be an AlGaN or InAlN alloy, or even aquaternary alloy, as long as the polarization field strength differencebetween layers 206 and 208 is sufficient to induce formation of 2DEG213.

In some advantageous embodiments, at least III-N channel layer 206 isintrinsic and not intentionally doped with impurities associated with aparticular conductivity type. Channel layer 206 in the intrinsic statecan be expected to have higher charge carrier mobility than is possiblefor a material of higher impurity doping. Intrinsic impurity (e.g., Si)levels in channel layer 206 are advantageously less than 1e17 atoms/cm³,and in some exemplary embodiments is between 1e14 and 1e16 atoms/cm³.

In some embodiments, capping layer 212 may be included over barrierlayer 210, while in other embodiments, capping layer 212 is not present.In some embodiments, where present, capping layer 212 may includedielectric material, such as an oxide, or another III-N material, forexample.

Anode metal region 220 may be formed in a recess extending through twoor more III-N heterostructure layers. As shown, anode metal region 220may contact channel layer 206. In some embodiments, anode metal region220 may include a narrower gate width within a III-N heterostructurerecess and a wider gate width over the III-N heterostructure. The degreeto which upper gate width overhangs the III-N heterostructure may beadjusted for a desired capacitance.

The composition of anode metal region 220 may be selected based on themetal-semiconductor workfunction difference relative to III-N channellayer 206 to achieve a desired transistor threshold voltage. In someembodiments, where III-N channel layer 206 is binary GaN, anode metalregion 220 advantageously includes at least one of Ni, W, Pt, or TiN.Each of these metals or metallic compounds may be associated with aparticular work function (or metal-semiconductor work functiondifference) that has an impact transistor threshold voltage. Althoughanode metal region 220 is illustrated as homogeneous, a stack orlaminate of metals may also be employed.

As shown in FIG. 2, anode n+ region 214 and cathode 216 are withinrecesses in the III-N heterostructure that are located on opposite sidesof anode metal region 220. The anode n+ region and cathode recesses alsoextend through III-N barrier layer 210, and polarization layer 208,landing on III-N channel layer 206. In the illustrated example, anode n+region 214 and cathode 216 are in physical contact with a c-plane (e.g.,Ga-face) of III-N channel layer 206. Anode n+ region 214 and cathode 216have access to an edge thickness of 2DEG 213 buried below theheterojunction between polarization layer 208 and III-N channel layer206. One skilled in the art would appreciate that a direct (orsubstantially direct) connection between 2DEG 213 and cathode 216 wouldto tend to reduce on resistance of the associated Schottky diode,thereby enhancing ESD protection. The junction between III-N channellayer 206 and anode n+ region 214 and cathode 216 may be aheterojunction with the composition of anode n+ region 214 and cathode216 being distinct from that of at least III-N channel layer 206. Insome embodiments, anode n+ region 214 and cathode 216 are also a III-Nmaterial. For example, anode n+ region 214 and cathode 216 may be InGaN.Some advantageous InGaN embodiments include 5-20% In (In_(x)Ga_(1-x)Nwith 5% ≤x≤20%). The alloy composition of anode n+ region 214 andcathode 216 may be constant or graded between III-N channel layer 206and contact metal 222. For some embodiments, anode n+ region 214 andcathode 216 are epitaxial, having the same crystallinity and orientationas III-N channel layer 206.

Anode n+ region 214 and cathode 216 advantageously include impuritydopants to have a first conductivity type (e.g., Si donor impurities forn-type conductivity). The doping level of anode n+ region 214 andcathode 216 is advantageously as high as practical for lowest transistorterminal resistance. In some exemplary embodiments where anode n+ region214 and/or cathode 216 is a III-N alloy, the impurity dopant level isover 1e19 atoms/cm³, and more advantageously over 1e20 atoms/cm³. Si isone exemplary dopant atom for which such high (N+) doping levels may beachieved in III-N alloys. An alternative N-type dopant is Ge.

For embodiments where anode n+ region 214 and cathode 216 have n-typeconductivity, contact metal 222 may be any suitable metal, such as atleast one of Ti, Al, or W, for example. Other metals known to make ohmiccontacts to n-type III-N materials may be suitable alternatives formaking ohmic contact to anode n+ region 214 and cathode 216.

Interconnect metal 224 may electrically couple anode metal region 220and anode n+ region 214, forming a united anode. In some embodiments,interconnect metal 224 may be copper or another metal suitable forinterconnect formation. While shown as being present at a bottom or M0interconnect layer, interconnect metal 224 may couple anode metal region220 and anode n+ region 214 at a higher interconnect layer.

Spacer material 226 may be any low-k (e.g., bulk permittivity of 3, orless) or conventional dielectric material (e.g., bulk permittivity of3.5-8) known to be suitable for the purpose of insulating anode metalregions from nearby metals.

FIG. 3 is a cross-sectional view an exemplary III-N heterojunctionsilicon controlled rectifier structure, in accordance with someembodiments. As shown in FIG. 3, device 300 may include substrate 302,barrier layer 304, channel layer 306, polarization layer 308, barrierlayer 310, capping layer 312, 2DEG 313, anode n+ region 314, cathode316, anode metal region 318, contact metal 320, and delta doping layer322. Device 300 may include many of the same features previouslypresented in reference to device 200.

In some embodiments, channel layer 306 includes delta doping layer 322,which may increase the presence of charge carriers by introducingdopants, such as silicon, during the epitaxial growth of channel layer306. As shown, anode metal region 318 may reside in a recess that onlypartially extends through polarization layer 308. In some embodiments,anode metal region 318 may be separated from channel layer 306 by abouta 1-3 nm portion of polarization layer 308. Also, anode metal region 318may extend laterally into contact with anode n+ region 314, from aboveand sideways, without III-N heterostructure material between them.

FIG. 4 is a cross-sectional view an exemplary III-N heterojunctionsilicon controlled rectifier structure, in accordance with someembodiments, As shown in FIG. 4, device 400 may include substrate 402,barrier layer 404, channel layer 406, polarization layer 408, barrierlayer 410, capping layer 412, 2DEG 413, anode n+ region 414, cathode416, anode metal region 418, contact metal 420, implant doping layer422, first gate width 424, second gate width 426, and third gate width428. Device 400 may include many of the same features previouslypresented in reference to devices 200 and 300. In some embodiments,channel layer 406 includes implant doping layer 422, which may includesilicon doping for an increased presence of charge carriers.

As shown, anode metal region 418 may contact a surface of polarizationlayer 408 and may include first gate width 424 within theheterostructure, second gate width 426 above the heterostructure, andthird gate width 428 above anode n+ region 414.

The III-N devices described above may be fabricated using a variety ofmethods. FIG. 5 is a flow diagram illustrating methods 500 for forming aIII-N heterojunction silicon controlled rectifier, in accordance withsome embodiments. Methods 500 begin at operation 502 where a substrateincluding a crystalline seed layer is received. The substrate receivedat operation 502 may be any of those described above, for example. Atoperation 504, a III-N epitaxial growth process is employed to grow acrystalline Ga-polar III-N heterostructure on the substrate seedingsurface. The heterostructure grown induces the formation of a 2D chargecarrier sheet. In some embodiments, delta doping is included in theepitaxial growth of a channel layer. The epitaxial growth performed atoperation 504 may form a continuous crystal over an entire surface of asubstrate, or may be limited to islands or mesas occupying only aportion of a substrate surface as controlled through a templatingpattern. Alternatively, a Ga-face of a III-N crystal grown with anypolarity is exposed at operation 504. For example, a III-N crystal maybe first grown with N-polarity over a substrate, and the substrate thenremoved to expose the Ga-face to subsequent processing.

At operation 506, a dummy gate may be formed by any suitable method todefine a location for an eventual anode metal region. In someembodiments, a poly-silicon dummy gate may be formed. Methods 500continue at operation 508 where anode n+ region and cathodesemiconductor is formed in a manner that ensures the anode n+ region andcathode semiconductor are coupled to the 2D charge carrier sheet presentwithin the heterostructure. The formation process may further entailforming a recess through layers of the III-N heterostructure anddeposition or growth of semiconductor within the recess. Any patterningtechniques may be employed to form the recess and any epitaxial growthtechnique or deposition process may be employed, for example to form anyof the anode n+ region and cathode semiconductor compositions describedabove.

Methods 500 continue at operation 510 where the dummy gate may beremoved by any etch or ablation techniques. At operation 512, a recessmay be created in the heterostructure in which the gate will be formedand implant doping and activation may be performed. Methods 500 continueat operation 514 where an anode metal region is formed in a manner thatensures the anode metal region will be coupled (e.g., withrectification) to the 2D charge carrier sheet. Any depositionprocess(es) suitable for the chosen anode metal region may be employed.For example, one or more of physical vapor deposition, chemical vapordeposition, or atomic layer deposition may be employed to deposit one ormore gate dielectric layer and one or more the metal or metalliccompound, such as any of those described elsewhere herein. Finally, tothe extent the formation of the anode metal region did not couple withthe anode n+ region or cathode, at operation 516 a united anode isformed by coupling the anode metal region to the anode n+ region orcathode, perhaps through an interconnect metal routing.

FIG. 6 illustrates a smart device or a computer system or a SoC(System-on-Chip) which includes a III-N heterojunction siliconcontrolled rectifier structure, according to some embodiments. In someembodiments, computing device 600 represents a mobile computing device,such as a computing tablet, a mobile phone or smart-phone, awireless-enabled e-reader, or other wireless mobile device. It will beunderstood that certain components are shown generally, and not allcomponents of such a device are shown in computing device 600. In someembodiments, one or more components of computing device 600, for examplecellular 672 and/or wireless 674, include a III-N heterojunction siliconcontrolled rectifier structure as described above, for example coupledwith a transceiver.

For purposes of the embodiments, the transistors in various circuits andlogic blocks described here are metal oxide semiconductor (MOS)transistors or their derivatives, where the MOS transistors includecathode, anode n+ region, gate, and bulk terminals. The transistorsand/or the MOS transistor derivatives also include Tri-Gate and FinFETtransistors, Tunneling FET (TFET), Square Wire, or Rectangular RibbonTransistors, ferroelectric FET (FeFETs), or other devices implementingtransistor functionality like carbon nanotubes or spintronic devices.MOSFET symmetrical anode n+ region and cathode terminals i.e., areidentical terminals and are interchangeably used here. A TFET device, onthe other hand, has asymmetric Anode n+ region and Cathode terminals.Those skilled in the art will appreciate that other transistors, forexample, Bi-polar junction transistors—BJT PNP/NPN, BiCMOS, CMOS, etc.,may be used without departing from the scope of the disclosure.

In some embodiments, computing device 600 includes a first processor610. The various embodiments of the present disclosure may also comprisea network interface within 670 such as a wireless interface so that asystem embodiment may be incorporated into a wireless device, forexample, cell phone or personal digital assistant.

In one embodiment, processor 610 can include one or more physicaldevices, such as microprocessors, application processors,microcontrollers, programmable logic devices, or other processing means.The processing operations performed by processor 610 include theexecution of an operating platform or operating system on whichapplications and/or device functions are executed. The processingoperations include operations related to I/O (input/output) with a humanuser or with other devices, operations related to power management,and/or operations related to connecting the computing device 600 toanother device. The processing operations may also include operationsrelated to audio I/O and/or display I/O.

In one embodiment, computing device 600 includes audio subsystem 620,which represents hardware (e.g., audio hardware and audio circuits) andsoftware (e.g., drivers, codecs) components associated with providingaudio functions to the computing device. Audio functions can includespeaker and/or headphone output, as well as microphone input. Devicesfor such functions can be integrated into computing device 600, orconnected to the computing device 600. In one embodiment, a userinteracts with the computing device 600 by providing audio commands thatare received and processed by processor 610.

Display subsystem 630 represents hardware (e.g., display devices) andsoftware (e.g., drivers) components that provide a visual and/or tactiledisplay for a user to interact with the computing device 600. Displaysubsystem 630 includes display interface 632, which includes theparticular screen or hardware device used to provide a display to auser. In one embodiment, display interface 632 includes logic separatefrom processor 610 to perform at least some processing related to thedisplay. In one embodiment, display subsystem 630 includes a touchscreen (or touch pad) device that provides both output and input to auser.

I/O controller 640 represents hardware devices and software componentsrelated to interaction with a user. I/O controller 640 is operable tomanage hardware that is part of audio subsystem 620 and/or displaysubsystem 630. Additionally, I/O controller 640 illustrates a connectionpoint for additional devices that connect to computing device 600through which a user might interact with the system. For example,devices that can be attached to the computing device 600 might includemicrophone devices, speaker or stereo systems, video systems or otherdisplay devices, keyboard or keypad devices, or other I/O devices foruse with specific applications such as card readers or other devices.

As mentioned above, I/O controller 640 can interact with audio subsystem620 and/or display subsystem 630. For example, input through amicrophone or other audio device can provide input or commands for oneor more applications or functions of the computing device 600.Additionally, audio output can be provided instead of, or in addition todisplay output. In another example, if display subsystem 630 includes atouch screen, the display device also acts as an input device, which canbe at least partially managed by I/O controller 640. There can also beadditional buttons or switches on the computing device 600 to provideI/O functions managed by I/O controller 640.

In one embodiment, I/O controller 640 manages devices such asaccelerometers, cameras, light sensors or other environmental sensors,or other hardware that can be included in the computing device 600. Theinput can be part of direct user interaction, as well as providingenvironmental input to the system to influence its operations (such asfiltering for noise, adjusting displays for brightness detection,applying a flash for a camera, or other features).

In one embodiment, computing device 600 includes power management 650that manages battery power usage, charging of the battery, and featuresrelated to power saving operation. Memory subsystem 660 includes memorydevices for storing information in computing device 600. Memory caninclude nonvolatile (state does not change if power to the memory deviceis interrupted) and/or volatile (state is indeterminate if power to thememory device is interrupted) memory devices. Memory subsystem 660 canstore application data, user data, music, photos, documents, or otherdata, as well as system data (whether long-term or temporary) related tothe execution of the applications and functions of the computing device600.

Elements of embodiments are also provided as a machine-readable medium(e.g., memory 660) for storing the computer-executable instructions. Themachine-readable medium (e.g., memory 660) may include, but is notlimited to, flash memory, optical disks, CD-ROMs, DVD ROMs, RAMs,EPROMs, EEPROMs, magnetic or optical cards, phase change memory (PCM),or other types of machine-readable media suitable for storing electronicor computer-executable instructions.

For example, embodiments of the disclosure may be downloaded as acomputer program (e.g., BIOS) which may be transferred from a remotecomputer (e.g., a server) to a requesting computer (e.g., a client) byway of data signals via a communication link (e.g., a modem or networkconnection).

Connectivity 670 includes hardware devices (e.g., wireless and/or wiredconnectors and communication hardware) and software components (e.g.,drivers, protocol stacks) to enable the computing device 600 tocommunicate with external devices. The computing device 600 could beseparate devices, such as other computing devices, wireless accesspoints or base stations, as well as peripherals such as headsets,printers, or other devices.

Connectivity 670 can include multiple different types of connectivity.To generalize, the computing device 600 is illustrated with cellularconnectivity 672 and wireless connectivity 674. Cellular connectivity672 refers generally to cellular network connectivity provided bywireless carriers, such as provided via GSM (global system for mobilecommunications) or variations or derivatives, CDMA (code divisionmultiple access) or variations or derivatives, TDM (time divisionmultiplexing) or variations or derivatives, or other cellular servicestandards. Wireless connectivity (or wireless interface) 674 refers towireless connectivity that is not cellular, and can include personalarea networks (such as Bluetooth, Near Field, etc.), local area networks(such as Wi-Fi), and/or wide area networks (such as WiMax), or otherwireless communication.

Peripheral connections 680 include hardware interfaces and connectors,as well as software components (e.g., drivers, protocol stacks) to makeperipheral connections. It will be understood that the computing device600 could both be a peripheral device (“to” 682) to other computingdevices, as well as have peripheral devices (“from” 684) connected toit. The computing device 600 commonly has a “docking” connector toconnect to other computing devices for purposes such as managing (e.g.,downloading and/or uploading, changing, synchronizing) content oncomputing device 600. Additionally, a docking connector can allowcomputing device 600 to connect to certain peripherals that allow thecomputing device 600 to control content output, for example, toaudiovisual or other systems.

In addition to a proprietary docking connector or other proprietaryconnection hardware, the computing device 600 can make peripheralconnections 680 via common or standards-based connectors. Common typescan include a Universal Serial Bus (USB) connector (which can includeany of a number of different hardware interfaces), DisplayPort includingMiniDisplayPort (MDP), High Definition Multimedia Interface (HDMI),Firewire, or other types.

While certain features set forth herein have been described withreference to various implementations, this description is not intendedto be construed in a limiting sense. Hence, various modifications of theimplementations described herein, as well as other implementations,which are apparent to persons skilled in the art to which the presentdisclosure pertains are deemed to lie within the spirit and scope of thepresent disclosure.

It will be recognized that the invention is not limited to theembodiments so described, but can be practiced with modification andalteration without departing from the scope of the appended claims. Forexample the above embodiments may include specific combinations offeatures as further provided below.

In one example, a Group III-Nitride (III-N) device structure is providedcomprising: a heterostructure having three or more layers comprisingIII-N material; an anode n+ region and a cathode comprising donordopants, wherein the anode n+ region and the cathode are on the firstlayer of the heterostructure and wherein the anode n+ region and thecathode extend beyond the heterostructure; and an anode metal regionwithin a recess that extends through two or more of the layers, whereinthe anode metal region is in electrical contact with the first layer,wherein the anode metal region comprises a first width within the recessand a second width beyond the recess, and wherein the anode metal regionis coupled with the anode n+ region.

In some embodiments, the first layer of the heterostructure comprisesGaN and a second layer of the heterostructure comprises AIN. Someembodiments also include donor dopants in the first layer of theheterostructure comprising a delta doping layer or an implant dopinglayer. In some embodiments, the anode metal region is separated from thefirst layer of the heterostructure by about a 1-3 nm portion of thesecond layer of the heterostructure. In some embodiments, the anodemetal region comprises Ni. In some embodiments, the second width of theanode metal region comprises an overhang over one or more layers of theheterostructure that extends into contact with the anode n+ region. Insome embodiments, the anode metal region comprises a third width thatextends over the anode n+ region. In some embodiments, the anode metalregion is coupled with the anode n+ region through an interconnectlayer.

In another example, a computer platform is provided comprising: one ormore transceiver; a processor communicatively coupled to thetransceiver; and an antenna coupled to the transceiver, wherein thetransceiver is coupled to a III-N device comprising: a heterostructurehaving three or more layers comprising III-N material; an anode n+region and a cathode comprising donor dopants, wherein the anode n+region and the cathode are on the first layer of the heterostructure andwherein the anode n+ region and the cathode extend beyond theheterostructure; and an anode metal region within a recess that extendsthrough two or more of the layers, wherein the anode metal region is inelectrical contact with the first layer, wherein the anode metal regioncomprises a first width within the recess and a second width beyond therecess, and wherein the anode metal region is coupled with the anode n+region.

In some embodiments, the first layer of the heterostructure comprisesGaN and a second layer of the heterostructure comprises AIN. Someembodiments also include donor dopants in the first layer of theheterostructure comprising a delta doping layer or an implant dopinglayer. In some embodiments, the anode metal region is separated from thefirst layer of the heterostructure by about a 1-3 nm portion of thesecond layer of the heterostructure. In some embodiments, the anodemetal region comprises Ni. In some embodiments, the second width of theanode metal region comprises an overhang over one or more layers of theheterostructure that extends into contact with the anode n+ region. Insome embodiments, the anode metal region comprises a third width thatextends over the anode n+ region. In some embodiments, the anode metalregion is coupled with the anode n+ region through an interconnectlayer.

In another example, a method of forming a Group III-Nitride (III-N)device structure is provided comprising: forming a heterostructurecomprising three or more III-N material layers; forming an anode n+region and a cathode semiconductor on the first layer of theheterostructure, wherein the anode n+ region and cathode comprise donordopants, and wherein the anode n+ region and cathode extend beyond theheterostructure; and forming an anode metal region within a recess thatextends through two or more of the layers, wherein the anode metalregion is in electrical contact with the first layer, wherein the anodemetal region comprises a first width within the recess and a secondwidth beyond the recess, and wherein the anode metal region is coupledwith the anode n+ region.

In some embodiments, forming the heterostructure comprising forming thefirst layer of the heterostructure comprising GaN and forming a secondlayer of the heterostructure comprising AIN. Some embodiments alsoinclude forming donor dopants in the first layer of the heterostructurecomprising delta doping or an implant doping. In some embodiments,forming the anode metal region comprising forming the anode metal regionseparated from the first layer of the heterostructure by about a 1-3 nmportion of the second layer of the heterostructure. In some embodiments,forming the anode metal region comprises forming an anode metal regioncomprising Ni. In some embodiments, forming the anode metal regioncomprises forming an overhang over one or more layers of theheterostructure that extends into contact with the anode n+ region. Insome embodiments, forming the anode metal region comprises forming athird width that extends over the anode n+ region. In some embodiments,forming the anode comprises coupling the anode metal region with theanode n+ region through an interconnect layer.

In another example, a Group III-Nitride (III-N) device structure isprovided comprising: a heterostructure having three or more layerscomprising III-N material, wherein a first layer of the heterostructurecomprises donor dopants; an anode consisting of a metal region within arecess that extends through two or more of the layers, wherein the anodeis in electrical contact with the first layer and a donor doped regioncomprising III-N material on the first layer; a cathode comprising donordopants, wherein the cathode is on the first layer of theheterostructure; and a conducting region in the first layer in directcontact to the cathode and conductively connected to the anode.

In some embodiments, the conducting region in the first layer is formedby polarization fields of a second layer. In some embodiments, aSchottky barrier is formed between the conducting region in the firstlayer and the anode. In some embodiments, the conducting region in thefirst layer and the anode extends below the anode. In some embodiments,the two regions of the anode are attached to each other.

In some embodiments, the two regions of the anode are electricallyconnected by a metal layer.

However, the above embodiments are not limited in this regard and, invarious implementations, the above embodiments may include theundertaking only a subset of such features, undertaking a differentorder of such features, undertaking a different combination of suchfeatures, and/or undertaking additional features than those featuresexplicitly listed. The scope of the invention should, therefore, bedetermined with reference to the appended claims, along with the fullscope of equivalents to which such claims are entitled.

We claim: 1-24. (canceled)
 25. A Group III-Nitride (III-N) devicestructure, comprising: a heterostructure having three or more layerscomprising III-N material; an anode n+ region and a cathode comprisingdonor dopants, wherein the anode n+ region and the cathode are on thefirst layer of the heterostructure and wherein the anode n+ region andthe cathode extend beyond the heterostructure; and an anode metal regionwithin a recess that extends through two or more of the layers, whereinthe anode metal region is in electrical contact with the first layer,wherein the anode metal region comprises a first width within the recessand a second width beyond the recess, and wherein the anode metal regionis coupled with the anode n+ region.
 26. The III-N device structure ofclaim 25, wherein the first layer of the heterostructure comprises GaN,and a second layer of the heterostructure comprises AN.
 27. The III-Ndevice structure of claim 26, further comprising donor dopants in thefirst layer of the heterostructure comprising a delta doping layer or animplanted impurity doping layer.
 28. The III-N device structure of claim26, wherein the anode metal region is separated from the first layer ofthe heterostructure by a 1-3 nm portion of the second layer of theheterostructure.
 29. The III-N device structure of claim 25, wherein theanode metal region comprises Ni.
 30. The III-N device structure of claim25, wherein the second width of the anode metal region comprises anoverhang over one or more layers of the hetero structure that extendsinto contact with the anode n+ region.
 31. The III-N device structure ofclaim 25, wherein the anode metal region comprises a third width thatextends over the anode n+ region.
 32. The III-N device structure ofclaim 1, wherein the anode metal region is coupled with the anode n+region through an interconnect layer.
 33. A computer platformcomprising: one or more transceiver; a processor communicatively coupledto the transceiver; and an antenna coupled to the transceiver, whereinthe transceiver is coupled to a III-N device comprising: aheterostructure having three or more layers comprising III-N material;an anode n+ region and a cathode comprising donor dopants, wherein theanode n+ region and the cathode are on the first layer of theheterostructure and wherein the anode n+ region and the cathode extendbeyond the heterostructure; and an anode metal region within a recessthat extends through two or more of the layers, wherein the anode metalregion is in electrical contact with the first layer, wherein the anodemetal region comprises a first width within the recess and a secondwidth beyond the recess, and wherein the anode metal region is coupledwith the anode n+ region.
 34. The computer platform of claim 33, whereinthe first layer of the heterostructure comprises GaN and a second layerof the heterostructure comprises AN.
 35. The computer platform of claim33, further comprising donor dopants in the first layer of theheterostructure comprising a delta doping layer or an implant dopinglayer.
 36. The computer platform of claim 33, wherein the anode metalregion is separated from the first layer of the heterostructure by a 1-3nm portion of the second layer of the heterostructure.
 37. The computerplatform of claim 33, wherein the anode metal region comprises Ni. 38.The computer platform of claim 33, wherein the second width of the anodemetal region comprises an overhang over one or more layers of theheterostructure that extends into contact with the anode n+ region. 39.The computer platform of claim 33, wherein the anode metal regioncomprises a third width that extends over the anode n+ region.
 40. Thecomputer platform of any of claims 33, wherein the anode metal region iscoupled with the anode n+ region through an interconnect layer.
 41. Amethod of forming a Group III-Nitride (III-N) device structure, themethod comprising: forming a heterostructure comprising three or moreIII-N material layers; forming an anode n+ region and a cathodesemiconductor on the first layer of the heterostructure, wherein theanode n+ region and cathode comprise donor dopants, and wherein theanode n+ region and cathode extend beyond the heterostructure; andforming an anode metal region within a recess that extends through twoor more of the layers, wherein the anode metal region is in electricalcontact with the first layer, wherein the anode metal region comprises afirst width within the recess and a second width beyond the recess, andwherein the anode metal region is coupled with the anode n+ region. 42.The method of claim 41, wherein forming the heterostructure comprisingforming the first layer of the heterostructure comprising GaN andforming a second layer of the heterostructure comprising AN.
 43. Themethod of claim 42, further comprising forming donor dopants in thefirst layer of the heterostructure through delta doping or an implantdoping.
 44. The method of claim 42, wherein forming the anode metalregion comprises forming the anode metal region separated from the firstlayer of the heterostructure by a 1-3 nm portion of the second layer ofthe heterostructure.